Using the material and device parameters given in below Tables 3.1, design an amplifier similar to that shown in provided figure that meets the following specifications with a phase margin of $60^{\circ}$. Assume the channel length is to be $1 \mu \mathrm{~m}$.



$$

\begin{array}{lll}

A_v>5000 \mathrm{~V} / \mathrm{V} & V_{D D}=2.5 \mathrm{~V} & V_{S S}=-2.5 \mathrm{~V} \\

G B=5 \mathrm{MHz} & C_L=10 \mathrm{pF} & S R>10 \mathrm{~V} / \mu \mathrm{s} \\

V_{\text {out }} \text { range }= \pm 2 \mathrm{~V} & \text { ICMR }=-1 \text { to } 2 \mathrm{~V} & P_{\text {diss }} \leq 2 \mathrm{~mW}

\end{array}

$$

\begin{table}

\captionsetup{labelformat=empty}

\caption{Table 3.1 Constants for Silicon}

\begin{tabular}{|l|l|l|l|}

\hline Constant Symbol & Constant Description & Value & Units \\

\hline $V_{G 0}$ & Silicon bandgap ( $27^{\circ} \mathrm{C}$ ) & 1.205 & V \\

\hline $k$ & Boltzmann's constant & $1.381 \times 10^{-23}$ & J/K \\

\hline $n_i$ & Intrinsic carrier concentration ( $27^{\circ} \mathrm{C}$ ) & $1.45 \times 10^{10}$ & $\mathrm{cm}^{-3}$ \\

\hline $\varepsilon_0$ & Permittivity of free space & $8.854 \times 10^{-14}$ & F/cm \\

\hline $\varepsilon_{\mathrm{Si}}$ & Permittivity of silicon & $11.7 \varepsilon_0$ & F/cm \\

\hline $\varepsilon_{\mathrm{ox}}$ & Permittivity of $\mathrm{SiO}_2$ & $3.9 \varepsilon_0$ & F/cm \\

\hline

\end{tabular}

\end{table}

\begin{tabular}{|l|l|l|l|l|}

\hline \multirow[b]{2}{*}{Parameter Symbol} & \multirow[b]{2}{*}{Parameter Description} & \multicolumn{2}{|c|}{Typical Parameter Value} & \multirow[b]{2}{*}{Units} \\

\hline & & n-Channel & p-Channel & \\

\hline $V_{T 0}$ & Threshold voltage ( $V_{B S}=0$ ) & $0.7 \pm 0.15$ & $-0.7 \pm 0.15$ & V \\

\hline $K^{\prime}$ & Transconductance parameter (in saturation) & $110.0 \pm 10 \%$ & $50.0 \pm 10 \%$ & $\mu \mathrm{A} / \mathrm{V}^2$ \\

\hline $\gamma$ & Bulk threshold parameter & 0.4 & 0.57 & $\mathrm{V}^{1 / 2}$ \\

\hline $\lambda$ & Channel length modulation parameter & $0.04(L=1 \mu \mathrm{~m}) 0.01(L=2 \mu \mathrm{~m})$ & $0.05(L=1 \mu \mathrm{~m}) 0.01(L=2 \mu \mathrm{~m})$ & $\mathrm{V}^{-1}$ \\

\hline & & & & \\

\hline $2\left|\phi_F\right|$ & Surface potential at strong inversion & 0.7 & 0.8 & V \\

\hline

\end{tabular}